PART |
Description |
Maker |
FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. STMicroelectronics N.V. MICROSEMI CORP
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PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
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NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET N-Channel 100-V (D-S) MOSFET N-Channel, 100-V Single
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
2SJ289JFTD 2SJ189-TL 2SK1839JJTL |
0.5 A, 100 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET PCP, SC-62, 3 PIN 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DOMINANT Opto Technologies Sdn. Bhd.
|
IRF5EA1310 IRF5EA1310PBF |
23 A, 100 V, 0.036 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
International Rectifier
|
IRF150-153 IRF151 IRF152 IRF153 IRF150 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V N沟道功率MOSFET0甲,60 V/100 V N-Channel Power MOSFETs/ 40 A/ 60 V/100 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP Advanced Power Electronics Corp.
|
IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
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